1/4 STPS3060Cw october 2003 - ed: 1a high voltage power schottky rectifier ? high voltage dual schottky rectifier suited for switchmode power supplies and other power converters. packaged in to-247, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. description n negligible switching losses n low forward voltage drop n low capacitance n high reverse avalanche surge capability. features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 60 v i f(rms) rms forward current per diode 30 a i f(av) average forward current d = 0.5 tc = 130c per diode per device 15 30 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal per diode 200 a i rrm repetitive peak reverse current tp=2 m s f=1khz per diode 1a i rsm non repetitive peak reverse current tp = 100s per diode 1a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature * 150 c dv/dt critical rate of rise of reverse voltage 1000 v/ m s absolute ratings (limiting values, per diode) i f(av) 2x15a v rrm 60 v tj (max) 150c v f (max) 0.75 v main product characteristics *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink a1 k a2 a1 k a2 to-247 STPS3060Cw
STPS3060Cw 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 150 m a tj = 125c 100 ma v f * forward voltage drop tj = 25 ci f =15a 0.85 v tj = 125c i f =15a 0.65 0.75 tj=25 ci f =30a 1.05 tj = 125c i f =30a 0.80 0.90 pulse test: * tp = 5ms, d <2% **tp = 380s, d <2% to evaluate the maximum conduction losses use the following equation : p=0.6xi f(av) + 0.01 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode total 1.5 0.8 c/w r th(c) coupling 0.1 c/w thermal resistances when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) p (w) f(av) 0 2 4 6 8 10 12 14 16 02468101214161820 i (a) f(av) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 1 d = 0.5 fig. 1: conduction losses versus average current (per diode). i (a) f(av) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0 25 50 75 100 125 150 t (c) amb t d =tp/t tp r=r th(j-a) th(j-i) r =15c/w th(j-a) fig. 2: average forward current versus ambient temperature ( d =0.5, per diode).
STPS3060Cw 3/4 0 20 40 60 80 100 120 140 160 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m i m t d =0.5 t(s) t =50c c t =75c c t =110c c fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode) . 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t d =tp/t tp t (s) p d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 5 1015202530354045505560 i (ma) r v (v) r t =125c j t =100c j t =50c j t =75c j fig. 5: reverse leakage currrent versus reverse voltage applied (typical values, per diode). 100 1000 10000 1 10 100 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i (a) fm v (v) fm t =125c j fig. 7: forward voltage drop versus forward current (maximum values, per diode).
4/4 STPS3060Cw information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2003 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com n cooling method : c n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n ordering type marking package weight base qty delivery mode STPS3060Cw STPS3060Cw to-247 4.4 g 50 tube n epoxy meets ul94,v0 package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143
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